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This study investigates the integration of reduced graphene oxide (rGO) films as ground plane in miniaturized RF/mm-wave systems for advanced thermal management applications. Traditional methods such as copper-based heat spreaders struggle to handle the increased power and tighter integration requirements of modern day RF/mmWave packaging. Due to rGO’s exceptionally high in-plane thermal conductivity (∼1100 W/mK), when compared with copper (∼400 W/mK), rGO emerges as a compelling candidate for thermal management in RF electronic packaging. This study investigates the use of rGO to form a ground plane in RF and microwave electronics, evaluating its performance through meticulous transmission line simulations and measurements. Our findings reveal that rGO ground planes exhibit high signal integrity, with an average loss of about 1 dB at 10 GHz and around 2 dB up to 26 GHz, comparable to the performance of traditional copper ground planes. These results indicate that rGO is a promising material for RF and microwave circuits, especially in applications requiring enhanced thermal management and mechanical flexibility. 

Abstract Electromigration in metal interconnects remains a significant challenge in the continued scaling of integrated circuits towards ever‐smaller single‐nanometer nodes. Conventional damascene architectures of barrier/liner layers and conducting metal cause inevitable compromises between device performance and feature dimensions. In contrast to contemporary barrier/liner materials (e.g., Co, Ta, and Ru), an ultrathin passivation layer that can effectively mitigate electromigration is needed. At the ultimate atomically‐thin limit, 2D materials are promising candidates given their exceptional mechanical properties and impermeability. Here, a facile and effective approach is presented to mitigating electromigration in copper (Cu) interconnects via passivation with insulating monolayer 2D hexagonal boron nitride (hBN). The hBN‐passivated Cu interconnects, compared to otherwise identical but bare Cu interconnects, exhibit on average a >20% higher breakdown current density and a >2600% longer lifetime (at a high current density of 5.4 × 10⁷A cm⁻²). Post‐mortem metrology elucidates uniform conformal contact between the hBN‐passivated Cu interface and common failure features due to electromigration.